论文信息 - Erratum: “Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states” [Appl. Phys. Lett. 106, 152104 (2015)] - 字舞流文

Erratum: “Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states” [Appl. Phys. Lett. 106, 152104 (2015)]

Takashi Taniguchi | Kenji Watanabe | Daniel Rhodes | Thomas E. Mallouk | Mauricio Terrones | Simin Feng | Luis Balicas | Junjie Wang | Minh An T. Nguyen | J.-X. Zhu

[1] Daniel Rhodes,et al. Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states , 2015, 1505.00807.