Resonant interband tunnel diodes with AlGaSb barriers
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[1] T. C. McGill,et al. New negative differential resistance device based on resonant interband tunneling , 1989 .
[2] J. B. Boos,et al. Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system , 2000 .
[3] Yu,et al. Multiband treatment of quantum transport in interband tunnel devices. , 1992, Physical review. B, Condensed matter.
[4] MECHANISMS OF VALLEY CURRENTS IN INAS/ALSB/GASB RESONANT INTERBAND TUNNELING DIODES , 1995 .
[5] J. Schulman. Analysis of Sb-based resonant interband tunnel diodes for circuit modeling , 1999 .
[6] K. Maezawa,et al. InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devices , 1996, IEEE Electron Device Letters.
[7] Wang,et al. Interband resonant tunneling in InAs/AlSb/GaSb symmetric polytype structures. , 1992, Physical review. B, Condensed matter.
[8] S. Tehrani,et al. Self-consistent modeling of the current–voltage characteristics of resonant tunneling structures with type II heterojunctions , 1997 .
[9] H. Kitabayashi,et al. Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs double barrier diodes , 1998 .
[10] W. H. Weinberg,et al. Characterization of AlSb/InAs surfaces and resonant tunneling devices , 1999 .
[11] Pinaki Mazumder,et al. Digital circuit applications of resonant tunneling devices , 1998, Proc. IEEE.