Tunable oxide-bypassed trench gate MOSFET: breaking the ideal superjunction MOSFET performance line at equal column width

The superjunction (SJ) MOSFET power device is recognized for its higher blocking capability and lower on-state resistance that break the conventional unipolar silicon limit. However, SJ devices below 100 V rating incur the constraint of unrealistically narrow column widths , and their performance is greatly handicapped due to difficulties in the formation of perfectly charge-balanced SJ p-n columns by current process technology. Based on an alternative approach of the tunable oxide-bypassed (TOB) SJ MOSFET concept, a TOB-UMOS device of 79 V rating has been successfully fabricated for the first time. Laboratory measurements indicate that the device breaks the ideal SJ MOSFET performance line at equal column width of 3.5 /spl mu/m, and potentially the ideal silicon limit as well.

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