Clustering and phonon effects in AlxGa1−xAsGaAs quantum-well heterostructure lasers grown by molecular beam epitaxy

[1]  T. Drummond,et al.  Three period (Al,Ga)As/GaAs heterostructures with extremely high mobilities , 1981 .

[2]  H. Kroemer Simple rate equation model for hypothetical doubly stimulated emission of both photons and phonons in quantum-well lasers , 1981 .

[3]  N. Holonyak,et al.  Device-quality epitaxial AlAs by metalorganic-chemical vapor deposition , 1981 .

[4]  P. Dapkus,et al.  Holonyak et al. Respond , 1981 .

[5]  C. Weisbuch,et al.  Alloy Clustering in Al x Ga 1-x As , 1981 .

[6]  N. Holonyak,et al.  Quenching of stimulated phonon emission in AlxGa1−xAs-GaAs quantum-well heterostructures , 1981 .

[7]  T. Drummond,et al.  Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructures , 1981 .

[8]  N. Holonyak,et al.  Continuous room‐temperature photopumped laser operation of modulation‐doped AlxGa1−xAs/GaAs superlattices , 1981 .

[9]  Karl Hess,et al.  Alloy clustering in AlxGa1-xAs-GaAs quantum-well heterostructures , 1980 .

[10]  N. Holonyak,et al.  Phonon contribution to double‐heterojunction laser operation , 1980 .

[11]  N. Holonyak,et al.  Induced phonon‐sideband laser operation of large‐quantum‐well AlxGa1−xAs‐GaAs heterostructures (Lz ∼200–500 Å) , 1980 .

[12]  N. Holonyak,et al.  Phonon‐assisted recombination and stimulated emission in quantum‐well AlxGa1−xAs‐GaAs heterostructures , 1980 .

[13]  A. Gossard,et al.  Observation of Magnetophonon Resonances in a Two-Dimensional Electronic System , 1980 .

[14]  Russell D. Dupuis,et al.  Quantum-well heterostructure lasers , 1980 .

[15]  K. Hess Impurity and phonon scattering in layered structures , 1979 .

[16]  N. Holonyak,et al.  Phonon-assisted recombination and stimulated emission in multiple quantum-well Mo-CVD AlxGa1-xAs-GaAs heterostructures (Lz∽50Å, E1-1' -2× h̵ωLO⪅h̵ω , 1979 .

[17]  S. Mehrotra,et al.  Crystal equilibrium and the electronic contribution to the elastic constants of potassium and rubidium , 1979 .

[18]  K. Hess,et al.  Remote polar phonon scattering in silicon inversion layers , 1979 .

[19]  N. Holonyak,et al.  Phonon‐sideband MO‐CVD quantum‐well AlxGa1−xAs‐GaAs heterostructure laser , 1979 .

[20]  H. M. Manasevit The Use of Metal‐Organics in the Preparation of Semiconductor Materials: III . Studies of Epitaxial III ‐ V Aluminum Compound Formation Using Trimethylaluminum , 1971 .

[21]  J. Shah Hot electrons and phonons under high intensity photoexcitation of semiconductors , 1978 .