Automated On-Wafer Noise and Load Pull Characterization Using Precision Computer Controlled Electromechanical Tuners
暂无分享,去创建一个
A wafer probing system capable of both noise, and load and source pull measurements is described. The system is based on precision computer controlled electromechanical tuners. Sophisticated system software controls calibration, measurements, data analysis and display. Results of measurements of submicron In-GaAs/InAlAs/InP HEMTs and GaAs MESFETs are presented.
[1] R. Q. Lane,et al. The determination of device noise parameters , 1969 .
[2] Arthur Uhlir,et al. A Novel Procedure for Receiver Noise Characterization , 1973 .
[3] P.C. Chao,et al. Microwave InAlAs/InGaAs/InP HEMTs: status and applications , 1990, International Conference on Indium Phosphide and Related Materials.
[4] M. W. Pospieszalski,et al. On the Measurement of Noise Parameters of Microwave Two-Ports (Short Paper) , 1986 .