论文信息 - Design and Fabrication of MOSFETs with a Reverse Embedded SiGe (Rev. e-SiGe) Structure

Design and Fabrication of MOSFETs with a Reverse Embedded SiGe (Rev. e-SiGe) Structure

A novel device structure containing a SiGe stressor is used to impose tensile strain in nMOSFET channel. 400MPa of uniaxial tensile stress is induced in the Si channel through elastic relaxation/strain of the SiGe/Si bi-layer structure. This strain results in 40% mobility enhancement and 15% drive current improvement for sub-60nm devices compared to the control device with no strain

[1] D. Greenlaw,et al. Integration and optimization of embedded-sige, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[2] T. Numata,et al. Strain evaluation of strained-Si layers on SiGe by the nano-beam electron diffraction (NBD) method , 2005 .

[3] H. Nayfeh,et al. Strained silicon MOSFET technology , 2002, Digest. International Electron Devices Meeting,.

[4] S. Narasimha,et al. Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs , 2002, Digest. International Electron Devices Meeting,.

[5] V. Fiori,et al. Performance boost of scaled Si PMOS through novel SiGe stressor for HP CMOS , 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

[6] P. Bai,et al. A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1 /spl mu/m/sup 2/ SRAM cell , 2002, Digest. International Electron Devices Meeting,.