Flat-topped ultrabroad stimulated emission from chirped InAs/InP quantum dot laser with spectral width of 92 nm
暂无分享,去创建一个
Fengtong Xu | Zunren Lv | Xiaoguang Yang | Tao Yang | H. Ji | S. Luo | F. Gao | P. Liang
[1] Xuliang Zhou,et al. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission , 2014 .
[2] Pallab Bhattacharya,et al. Investigation of Chirped InAs/InGaAlAs/InP Quantum Dash Lasers as Broadband Emitters , 2014, IEEE Journal of Quantum Electronics.
[3] Xiaoguang Yang,et al. Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition , 2013 .
[4] Tien Khee Ng,et al. Chirped InAs/InP quantum-dash laser with enhanced broad spectrum of stimulated emission , 2013 .
[5] D. Poitras,et al. Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height. , 2012, Optics letters.
[6] Siming Chen,et al. Ultra-broad spontaneous emission and modal gain spectrum from a hybrid quantum well/quantum dot laser structure , 2012 .
[7] I. Marko,et al. Efficiency limiting processes in 1.55 μm InAs/InP-based quantum dots lasers , 2010 .
[8] Richard A. Hogg,et al. Self-assembled quantum-dot superluminescent light-emitting diodes , 2010 .
[9] J. Fastenau,et al. Quantum Dashes on InP Substrate for Broadband Emitter Applications , 2008, IEEE Journal of Selected Topics in Quantum Electronics.
[10] Chen Xiao,et al. Accelerated Stochastic Simulation of Large Chemical Systems , 2007 .
[11] Y. Wang,et al. Role of optical gain broadening in the broadband semiconductor quantum-dot laser , 2007 .
[12] S. Mikhrin,et al. Quantum dot laser with 75 nm broad spectrum of emission. , 2007, Optics letters.
[13] J. Fastenau,et al. Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser. , 2007, Optics letters.
[14] C. Dimas,et al. Wideband quantum-dash-in-well superluminescent diode at 1.6 /spl mu/m , 2006, IEEE Photonics Technology Letters.
[15] P. Jin,et al. InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth , 2005 .
[16] Federico Capasso,et al. Ultra-broadband semiconductor laser , 2002, Nature.
[17] S. Sugou,et al. Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates , 2001 .
[18] J. Piprek,et al. Self-consistent analysis of high-temperature effects on strained-layer multiquantum-well InGaAsP-InP lasers , 2000, IEEE Journal of Quantum Electronics.