Flat-topped ultrabroad stimulated emission from chirped InAs/InP quantum dot laser with spectral width of 92 nm

We demonstrate the generation of 92 nm (−3 dB bandwidth) flat-topped ultrabroad stimulation emission from a chirped InAs/InP quantum dot (QD) laser. A greatly enhanced bandwidth of the gain spectrum is achieved, which is attributed to the additionally broadened quantum dot energy levels utilizing gradually changed height of QDs in the stacked active layers. The laser exhibits a maximum output power of 0.35 W under pulsed conditions, and the average spectral power density of above 3.8 mW/nm is obtained. The ultrabroad lasing spectrum in the wavelength interval of 1.49–1.61 μm covering S-C-L bands makes such a laser potentially useful as an optical source for various applications being compatible with silica fibers.

[1]  Xuliang Zhou,et al.  High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission , 2014 .

[2]  Pallab Bhattacharya,et al.  Investigation of Chirped InAs/InGaAlAs/InP Quantum Dash Lasers as Broadband Emitters , 2014, IEEE Journal of Quantum Electronics.

[3]  Xiaoguang Yang,et al.  Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition , 2013 .

[4]  Tien Khee Ng,et al.  Chirped InAs/InP quantum-dash laser with enhanced broad spectrum of stimulated emission , 2013 .

[5]  D. Poitras,et al.  Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height. , 2012, Optics letters.

[6]  Siming Chen,et al.  Ultra-broad spontaneous emission and modal gain spectrum from a hybrid quantum well/quantum dot laser structure , 2012 .

[7]  I. Marko,et al.  Efficiency limiting processes in 1.55 μm InAs/InP-based quantum dots lasers , 2010 .

[8]  Richard A. Hogg,et al.  Self-assembled quantum-dot superluminescent light-emitting diodes , 2010 .

[9]  J. Fastenau,et al.  Quantum Dashes on InP Substrate for Broadband Emitter Applications , 2008, IEEE Journal of Selected Topics in Quantum Electronics.

[10]  Chen Xiao,et al.  Accelerated Stochastic Simulation of Large Chemical Systems , 2007 .

[11]  Y. Wang,et al.  Role of optical gain broadening in the broadband semiconductor quantum-dot laser , 2007 .

[12]  S. Mikhrin,et al.  Quantum dot laser with 75 nm broad spectrum of emission. , 2007, Optics letters.

[13]  J. Fastenau,et al.  Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser. , 2007, Optics letters.

[14]  C. Dimas,et al.  Wideband quantum-dash-in-well superluminescent diode at 1.6 /spl mu/m , 2006, IEEE Photonics Technology Letters.

[15]  P. Jin,et al.  InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth , 2005 .

[16]  Federico Capasso,et al.  Ultra-broadband semiconductor laser , 2002, Nature.

[17]  S. Sugou,et al.  Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates , 2001 .

[18]  J. Piprek,et al.  Self-consistent analysis of high-temperature effects on strained-layer multiquantum-well InGaAsP-InP lasers , 2000, IEEE Journal of Quantum Electronics.