Emitter resistance of arsenic- and phosphorus-doped polysilicon emitter transistors

Measurements of emitter resistance have been made on arsenic- and phosphorus-doped polysilicon emitter bipolar transistors, fabricated with or without an interfacial oxide layer. It is found that the emitter resistance of phosphorus-doped transistors is considerably lower than that of arsenic-doped transistors. In addition the presence of a deliberately grown interfacial oxide layer leads to a significant increase in emitter resistance for both arsenic- and phosphorus-doped devices.

[1]  M. Ohring,et al.  Dependence of the Si‐SiO2 barrier height on SiO2 thickness in MOS tunnel structures , 1977 .

[2]  H C Card,et al.  Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes , 1971 .

[3]  P. Ashburn,et al.  Comparison of experimental and theoretical results on polysilicon emitter bipolar transistors , 1984, IEEE Transactions on Electron Devices.

[4]  P. Ashburn,et al.  Arsenic profiles in bipolar transistors with polysilicon emitters , 1981 .

[5]  Krishna C. Saraswat,et al.  Dopant segregation in polycrystalline silicon , 1980 .

[6]  B. Ricco,et al.  A comprehensive analytical and numerical model of polysilicon emitter contacts in bipolar transistors , 1984, IEEE Transactions on Electron Devices.

[7]  J.M.C. Stork,et al.  Characterization of non-ohmic behavior of emitter contacts of bipolar transistors , 1984, IEEE Electron Device Letters.

[8]  D.D. Tang,et al.  Method for determining the emitter and base series resistances of bipolar transistors , 1984, IEEE Transactions on Electron Devices.

[9]  R. Dutton,et al.  Segregation of Arsenic to the Grain Boundaries in Polycrystalline Silicon , 1980 .

[10]  P. Ashburn,et al.  Effects of surface treatments on the electrical characteristics of bipolar transistors with polysilicon emitters , 1983 .

[11]  H. C. Card,et al.  Asymmetry in the SiO2 tunneling barriers to electrons and holes , 1980 .

[12]  R.D. Isaac,et al.  Effect of emitter contact on current gain of silicon bipolar devices , 1980, IEEE Transactions on Electron Devices.

[13]  J. Graul,et al.  High-performance transistors with arsenic-implanted polysil emitters , 1976 .