Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS 2 Memristors

[1]  J. Killgore,et al.  Degradation of CVD-grown MoS_2 subjected to DC electrical stress , 2022, MRS Communications.

[2]  W. Lu,et al.  Memristive technologies for data storage, computation, encryption, and radio-frequency communication , 2022, Science.

[3]  Yuan Liu,et al.  Realization of Ultra-Scaled MoS2 Vertical Diodes via Double-Side Electrodes Lamination. , 2022, Nano letters.

[4]  Yueming Wang,et al.  Layer-dependent optical and dielectric properties of centimeter-scale PdSe2 films grown by chemical vapor deposition , 2022, npj 2D Materials and Applications.

[5]  E. Hwang,et al.  Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects , 2021, Advanced materials.

[6]  Arnab K. Pal,et al.  Two-dimensional materials enabled next-generation low-energy compute and connectivity , 2021, MRS Bulletin.

[7]  J. Yang,et al.  Standards for the Characterization of Endurance in Resistive Switching Devices. , 2021, ACS nano.

[8]  H. Alshareef,et al.  The development of integrated circuits based on two-dimensional materials , 2021, Nature Electronics.

[9]  Jack C. Lee,et al.  Sulfurization Engineering of One‐Step Low‐Temperature MoS2 and WS2 Thin Films for Memristor Device Applications , 2021, Advanced Electronic Materials.

[10]  Xianfu Wang,et al.  Low‐Energy Oxygen Plasma Injection of 2D Bi2Se3 Realizes Highly Controllable Resistive Random Access Memory , 2021, Advanced Functional Materials.

[11]  Jack C. Lee,et al.  On the stochastic nature of conductive points formation and their effects on reliability of MoS2 RRAM: Experimental characterization and Monte Carlo simulation , 2021, Microelectronics Reliability.

[12]  M. Shrivastava,et al.  A Roadmap for Disruptive Applications and Heterogeneous Integration Using Two-Dimensional Materials: State-of-the-Art and Technological Challenges. , 2021, Nano letters.

[13]  Peng Wu,et al.  Memory applications from 2D materials , 2021, Applied Physics Reviews.

[14]  F. Ren,et al.  Artificial Neuron and Synapse Devices Based on 2D Materials. , 2021, Small.

[15]  Yu‐Chuan Lin,et al.  Controllable Thin‐Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers , 2021, Advanced science.

[16]  Jack C. Lee,et al.  A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon , 2020, Advanced materials.

[17]  D. Akinwande,et al.  Observation of single-defect memristor in an MoS2 atomic sheet , 2020, Nature Nanotechnology.

[18]  Li Yang,et al.  Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application , 2020, Nanomaterials.

[19]  Jack C. Lee,et al.  Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems , 2020 .

[20]  A. Krasheninnikov,et al.  Formation of defects in two-dimensional MoS2 in the transmission electron microscope at electron energies below the knock-on threshold: the role of electronic excitations. , 2020, Nano letters.

[21]  Peng Zhou,et al.  Memory materials and devices: From concept to application , 2020 .

[22]  Yong-Jin Kim,et al.  Electret formation in transition metal oxides by electrochemical amorphization , 2020, NPG Asia Materials.

[23]  Wei-min Liu,et al.  Structural evolution and wear resistance of MoS2–Based lubricant films irradiated by heavy ions , 2019, Surface and Coatings Technology.

[24]  Jessie Xuhua Niu,et al.  All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration , 2019, Nature Communications.

[25]  C. Zambelli,et al.  Multilevel HfO2-based RRAM devices for low-power neuromorphic networks , 2019, APL Materials.

[26]  Kenji Watanabe,et al.  Transferred via contacts as a platform for ideal two-dimensional transistors , 2019, Nature Electronics.

[27]  Donhee Ham,et al.  Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV. , 2019, Nano letters.

[28]  Jack C. Lee,et al.  Thinnest Nonvolatile Memory Based on Monolayer h‐BN , 2019, Advanced materials.

[29]  Young Jae Kwon,et al.  Fabrication of a Cu‐Cone‐Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability , 2019, Advanced Functional Materials.

[30]  Yi Cui,et al.  Reversible and selective ion intercalation through the top surface of few-layer MoS2 , 2018, Nature Communications.

[31]  S. Banerjee,et al.  Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor , 2018, Crystals.

[32]  X. Duan,et al.  Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions , 2018, Nature.

[33]  Myungsoo Kim,et al.  Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides. , 2018, Nano letters.

[34]  Jing Guo,et al.  Atomically Thin Femtojoule Memristive Device , 2017, Advanced materials.

[35]  A. Dolocan,et al.  Revealing the Chemistry and Morphology of Buried Donor/Acceptor Interfaces in Organic Photovoltaics. , 2017, The journal of physical chemistry letters.

[36]  R. Waser,et al.  Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride , 2017 .

[37]  Faisal Ahmed,et al.  Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides. , 2017, ACS nano.

[38]  G. Pazour,et al.  Ror2 signaling regulates Golgi structure and transport through IFT20 for tumor invasiveness , 2017, Scientific Reports.

[39]  M. Cecchini,et al.  Ultrastructural Characterization of the Lower Motor System in a Mouse Model of Krabbe Disease , 2016, Scientific Reports.

[40]  X. Duan,et al.  Van der Waals heterostructures and devices , 2016 .

[41]  Rodney S. Ruoff,et al.  Revealing the planar chemistry of two-dimensional heterostructures at the atomic level , 2015, Nature Communications.

[42]  Jordi Suñé,et al.  Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM , 2013, Scientific Reports.

[43]  Byoung Hun Lee,et al.  Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device , 2013, Nanotechnology.

[44]  Dominique Baillargeat,et al.  From Bulk to Monolayer MoS2: Evolution of Raman Scattering , 2012 .

[45]  Kinam Kim,et al.  A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.

[46]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[47]  Changgu Lee,et al.  Anomalous lattice vibrations of single- and few-layer MoS2. , 2010, ACS nano.

[48]  B. Kahng,et al.  Random Circuit Breaker Network Model for Unipolar Resistance Switching , 2008 .