Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices

We demonstrate the feasibility of the InAs/GaSb/AlSb type-II superlattice photodiodes operating at the short wavelength infrared regime below 3 μm. An n-i-p type-II InAs/GaSb/AlSb photodiode was grown with a designed cut-off wavelength of 2 μm on a GaSb substrate. At 150 K, the photodiode exhibited a dark current density of 5.6 × 10−8 A/cm2 and a front-side-illuminated quantum efficiency of 40.3%, providing an associated shot noise detectivity of 1.0 × 1013 Jones. The uncooled photodiode showed a dark current density of 2.2 × 10−3 A/cm2 and a quantum efficiency of 41.5%, resulting in a detectivity of 1.7 × 1010 Jones.

[1]  M. Razeghi,et al.  Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection , 2009 .

[2]  Yajun Wei,et al.  Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm , 2002 .

[3]  Zhichuan Niu,et al.  MBE growth of very short period InAs/GaSb type-II superlattices on (0 0 1)GaAs substrates , 2007 .

[4]  Bruno Ullrich,et al.  Short-period InAs∕GaSb type-II superlattices for mid-infrared detectors , 2005 .

[5]  Georgy G. Zegrya,et al.  Mechanism of suppression of Auger recombination processes in type-II heterostructures , 1995 .

[6]  M. Razeghi,et al.  Growth and Characterization of Long-Wavelength Infrared Type-II Superlattice Photodiodes on a 3-in GaSb Wafer , 2011 .

[7]  Yajun Wei,et al.  Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering , 2004 .

[8]  Elena Plis,et al.  Three color infrared detector using InAs/GaSb superlattices with unipolar barriers , 2011 .

[9]  Xu Yingqiang,et al.  GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy , 2009 .

[10]  Manijeh Razeghi,et al.  High differential resistance type-II InAs∕GaSb superlattice photodiodes for the long-wavelength infrared , 2006 .

[11]  M. Razeghi,et al.  Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes , 2008 .

[12]  Yajun Wei,et al.  Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications , 2002 .

[13]  L. Esaki,et al.  A new semiconductor superlattice , 1977 .

[14]  Manijeh Razeghi,et al.  Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier , 2007 .

[15]  Frank Fuchs,et al.  Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy , 1995 .

[16]  Vaidya Nathan,et al.  Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes , 2007, SPIE OPTO.

[17]  Yajun Wei,et al.  High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering , 2003 .