Physical compact modeling and analysis of velocity overshoot in extremely scaled CMOS devices and circuits

A compact physics-based velocity-overshoot model is developed, implemented in metal oxide semiconductor field-effect transistor (MOSFET) circuit models, verified based on measured current-voltage data and Monte Carlo-simulation results, and demonstrated in performance projections for 25 nm bulk-Si complementary metal-oxide-semiconductor (CMOS). The demonstration, involving predicted current-voltage characteristics and ring-oscillator propagation delays, reveals a significant benefit of velocity overshoot, or quasi-ballistic transport, in extremely scaled nMOS and even pMOS devices, although the on-state currents are well below the ballistic limits. Physical insight afforded by the model reveals why the ballistic limits are not being reached in scaled bulk-Si CMOS technologies.

[1]  Jerry G. Fossum,et al.  A physical charge-based model for non-fully depleted SOI MOSFET's and its use in assessing floating-body effects in SOI CMOS circuits , 1995 .

[2]  P. J. Price.  On the flow equation in device simulation , 1988 .

[3]  Yuan Taur,et al.  Saturation transconductance of deep-submicron-channel MOSFETs , 1993 .

[4]  J. Slotboom,et al.  Non-local impact ionization in silicon devices , 1991, International Electron Devices Meeting 1991 [Technical Digest].

[5]  Yuan Taur,et al.  Fundamentals of Modern VLSI Devices , 1998 .

[6]  Young June Park,et al.  Drain current enhancement due to velocity overshoot effects and its analytic modeling , 1996 .

[7]  Hyung-Kyu Lim,et al.  Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's , 1983, IEEE Transactions on Electron Devices.

[8]  W. L. Engl,et al.  The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors , 1988 .

[9]  Mark S. Lundstrom.  Elementary scattering theory of the Si MOSFET , 1997, IEEE Electron Device Letters.

[10]  C. Hu,et al.  High-field transport of inversion-layer electrons and holes including velocity overshoot , 1997 .

[11]  Kenji Taniguchi,et al.  Analytical device model for submicrometer MOSFET's , 1991 .

[12]  G. Baccarani,et al.  An investigation of steady-state velocity overshoot in silicon , 1985 .

[13]  D. Frank,et al.  25 nm CMOS design considerations , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[14]  N. Goldsman,et al.  Efficient and accurate use of the energy transport method in device simulation , 1988 .

[15]  Jerry G. Fossum,et al.  Simplified energy-balance model for pragmatic multi-dimensional device simulation , 1997 .

[16]  Jerry G. Fossum,et al.  Physical subthreshold MOSFET modeling applied to viable design of deep-submicrometer fully depleted SOI low-voltage CMOS technology , 1995 .

[17]  Juan Bautista Roldán,et al.  Modeling effects of electron-velocity overshoot in a MOSFET , 1997 .

[18]  J. Fossum,et al.  A physical short-channel model for the thin-film SOI MOSFET applicable to device and circuit CAD , 1988 .

[19]  L. Forbes.  On the theory of 1/f noise of semi-insulating materials , 1995 .

[20]  J. Kavalieros,et al.  100 nm gate length high performance/low power CMOS transistor structure , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[21]  D. Tennant,et al.  The ballistic nano-transistor , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).