Ni fully GermanoSilicide for gate electrode application in pMOSFETs with HfSiON gate dielectrics
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M. Jurczak | J. Kittl | A. Lauwers | Kristin De Meyer | P. Absil | E. Simoen | S. Van Elshocht | S. Biesemans | R. Singanamalla | Hong Yu Yu | Xiaoping Shi