论文信息 - Electronic properties of grown-in defects in semi-insulating GaAs

Electronic properties of grown-in defects in semi-insulating GaAs

Defect structure of semi-insulating GaAs substrates manufactured by various vendors were compared using High Resolution Photo-Induced Transient Spectroscopy. A number of defect centers related to native defects and metallic impurities were detected and the concentrations of these centers were estimated.

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