Modeling concepts for modern semiconductor devices

As semiconductor technology continues to evolve, numerical modeling of the electrical device behavior is becoming increasingly important. In this contribution, results of a two-dimensional transient simulation of a charge-coupled device are presented. A hydrodynamic model suitable to describe the high electron mobility transistor is presented as well as simulation results. The concepts underlying the simulation of these rather complex devices are briefly discussed. Models for mobility and heat flux are critically reviewed.

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