Simulation of high frequency PWM and quasi-resonant converters using the lumped-charge power MOSFET model

A new, physically-based power MOSFET model features continuous and accurate curves for all three interelectrode capacitances. The model equations are derived from the charge stored on two discrete internal nodes and the three external terminals. A direct parameter extraction technique is demonstrated for the capacitance parameters. Applications include constant current gate drive circuit (gate charge plot); snubber design for a flyback converter; and a high frequency quasi-resonant zero-voltage switch converter. The availability of such accurate power device models can be expected to change power converter design methodology.<<ETX>>