Demonstration of direct bonding between InP and gadolinium gallium garnet (Gd3Ga5O12) substrates

The authors demonstrate the direct bonding of InP/Gd3Ga5O12 (GGG) and InP/GaInSb on GGG without glue. After chemical treatment, heat treatment was applied in an H2 atmosphere without a weight. This technique makes feasible the integration of semiconductor and magneto-optic devices.