Comparison on 6T, 5T and 4T SRAM cell using 22nm technology

The parameters such as Write Delay, Read Delay, Leakage Power, assumes an imperative part in the present day CMOS innovation. This paper examined about the near investigation of different SRAM cells, for example, 6T, 5T and 4T utilizing 22nm innovation. At the point when looking at 6T and 4T, the 4T SRAM cell has the efficient output. The leakage power is reduced considerably in 5T SRAM cell. This relative study is mimicked utilizing TANNER TOOL.

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