Impact of Key Circuit Parameters on Signal-to-Noise Ratio Characteristics for the Radio Frequency Single-Electron Transistors

Hybrid simulation was performed to analyze the response of the real-time reflection-type radio frequency single-electron transistor (RF-SET) measurement system. A compact and physically-based analytical SET model, which was validated with a Monte Carlo simulator, was used to simulate the SET characteristics, while SPICE equivalent circuits were implemented to simulate all other components of the RF-SET measurement system. The impact of various key parameters on the RF-SET response was demonstrated for a carrier frequency much less than I/e ( is the typical current through the SET). It was revealed that an inevitable feed-through loss between the tank circuit and the cryogenic amplifier, and high-frequency parasitics of the inductor degrade the RF-SET performance significantly. As such, they have to be optimized to experimentally realize the shot-noise-limited charge sensitivity.

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