Location control of grains by μ-Czochralski process with excimer-laser is a powerful tool for realizing high performance single-crystalline Si TFTs (c-Si TFTs). This study reports the behavior of p-channel single-crystalline Si TFTs fabricated inside a location-controlled grain by μ-Czochralski method. Self-aligned p-channel single-crystalline Si TFTs is fabricated with a top gate structure having ECR-PECVD SiO 2 as gate insulator. The field effect hole mobility of 250cm 2 /Vs and subthreshold swing of 0.29 V/dec. are obtained successfully. Effects of active Si thickness and boron channel doping on the characteristics of the c-Si TFTs were studied.