Liquid phase epitaxial growth and morphology of InSb quantum dots

In this paper we report on the morphology of InSb quantum dots (QDs) grown by liquid phase epitaxy on InAs and GaAs substrates. Small and large QDs are observed on both these two substrates, the resulting structures being generally similar to those produced by MBE and MOVPE. The density of the small QDs is approximately 1010 cm-2, with dimensions of 5-15 nm in height and 0.1-0.3 aspect ratio. The density, size and shape of the small QDs were found to change with growth temperature, supercooling and melt-substrate contact time. The large QDs appear to be at a much lower density, being approximately 2×107 and 1×109 cm-2 for growth on GaAs and InAs substrates, respectively. Furthermore, it was found that the difference in QD diameters becomes smaller as the lattice mismatch decreases.

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