Pillar농도 변화에 따른 Super-Junction MOSFET의 정적 및 동적 특성 분석

For the optimal design of Super-junction MOSFET, the electric charge of pillar and drift region are an important parameters. Thus in this paper, we analyzed static and dynamic characteristics with variations of quantity of electric charge at pillar, by simulation. When quantity of electric charge in pillar was larger than that of drift region, that is when we increased pillar doping concentration by 41%, we observed secondary breakdown voltage increased by 91%, softness factor decreased by 80% and avalanche energy increased by 12%.