论文信息 - Comparison of HVPE GaN films and substrates grown on sapphire and on MOCVD GaN epi-layer - 字舞流文

Comparison of HVPE GaN films and substrates grown on sapphire and on MOCVD GaN epi-layer

Hyungsang Kim | T. Kang | J. Oh

[1] Shuji Nakamura,et al. The Blue Laser Diode: GaN based Light Emitters and Lasers , 1997 .

[2] Ignacio Mártil,et al. Influence of defects on the electrical and optical characteristics of blue light-emitting diodes based on III–V nitrides , 1997 .

[3] S. Porowski. Growth and properties of single crystalline GaN substrates and homoepitaxial layers , 1997 .

[4] John C. Angus,et al. Low pressure synthesis of bulk, polycrystalline gallium nitride , 1997 .

[5] Theeradetch Detchprohm,et al. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer , 1992 .

[6] J. Karpinski,et al. High pressure thermodynamics of GaN , 1984 .