论文信息 - Optical properties of porous silicon Thue-Morse structures

Optical properties of porous silicon Thue-Morse structures

Dielectric aperiodic Thue-Morse structures up to 128 layers have been realized by the porous silicon technology. Normal incidence reflectivity measurements have been performed to investigate the photonic properties of the devices. A partial photonic band gap region, centered at 1100 nm and 70 nm wide has been observed for the S6 and S7 Thue-Morse structures. The S6 multilayer has been studied as sensor device on exposure to several chemical substances. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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