For the comparative investigations of the structural perfection of both CdTe and (Hg,Cd)Te, new versatile etchants have been developed and are reported in the presented paper. The etching solutions have a similar composition - two components are identical, but one acid is changed. The new etchants are suitable to produce etch pits on {111}A, {111}B, {110}, and other surface orientations of (Hg,Cd)Te and on {111}A surface of CdTe and Cd-rich (Cd,Zn)Te, respectively. The etch pits originate from grown-in dislocations as well as from dislocations produced by mechanical deformations. The etchants detect dislocations with high density (EPD up to 107 cm−2), subgrain boundaries, twins, and inclusions. It is possible to use the etchants both for bulk material and for epitaxial layers with suitable orientations. Furthermore, etching of Hg1-xCdxTe with variable mole fraction x(0⩽x⩽0.75) is possible by varying the dilutions of the etching solutions.
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