论文信息 - Comparison of Properties of an Al2O3 Thin Layers Grown with Remote O2 Plasma, H2O , or O3 as Oxidants in an ALD Process for HfO2 Gate Dielectrics - 字舞流文

Comparison of Properties of an Al2O3 Thin Layers Grown with Remote O2 Plasma, H2O , or O3 as Oxidants in an ALD Process for HfO2 Gate Dielectrics

C. Hwang | Jaehoon Park | Hong-bae Park | S. Lee | Jaehack Jeong | Moonju Cho | Hee-Sung Kang | Young Wook Kim