论文信息 - Single-event effects characterization of a 12-bit 200MSps A-to-D converter in 32nm SOI CMOS with MilliBeam™ and broad-beam heavy-ions

Single-event effects characterization of a 12-bit 200MSps A-to-D converter in 32nm SOI CMOS with MilliBeam™ and broad-beam heavy-ions

A 12-bit 32nm SOI CMOS pipeline ADC clocked at 200 MSps was tested at LBNL with the MilliBeam™ technique and showed no upsets with LET up to 30.9 MeV·cm<sup>2</sup>/mg (Kr), while 1-sample SETs up to 600 LSB in amplitude were observed with broad-beam exposure at TAMU with 0°, 60° incidence angles (Xe and Au), and LET up to 170 MeVcm<sup>2</sup>/mg.

Manuel Cabanas-Holmen | Will Burke | Paul Eaton | Alfio Zanchi | Roger Brees

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