论文信息 - Germanium photodetector integrated in a Silicon-On-Insulator microwaveguide - 字舞流文

Germanium photodetector integrated in a Silicon-On-Insulator microwaveguide

Design, fabrication and characterization of germanium on silicon photodetector integrated in SOI waveguide are reported. A responsivity of 1 A/W and a -3 dB bandwidth of 25 GHz under 6 V bias have been obtained at lambda=1.55 mum.

X. Le Roux | D. Marris-Morini | P. Crozat | L. Vivien | E. Cassan | P. Crozat | J. Damlencourt | L. Vivien | E. Cassan | D. Marris-Morini | J. Fédéli | S. Laval | D. Pascal | X. Le roux | M. Rouvière | J. Mangeney | L. El Melhaoui | J.-M. Fedeli | J. Mangeney | S. Laval | J.-F. Damlencourt | L. El Melhaoui | M. Rouviere | J. Fedeli | Juliette Mangeney | J. Mangeney | D. Marris‐Morini

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