论文信息 - Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFET

Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFET

We experimentally examine the effective mobility in nMOSFETs with La"2O"3 gate dielectrics without SiO"x-based interfacial layer. The reduced mobility is mainly caused by fixed charges in High-k gate dielectrics and the contribution of the interface state density is approximately 30% at N"s=5x10^1^1cm^-^2 in the low 10^1^1cm^-^2eV^-^1 order. It is considered that one of the effective methods for improving mobility is to utilize La-silicate layer formed by high temperature annealing. However, there essentially exists trade-off relationship between high temperature annealing and small EOT.

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