Reliability assessment of electrostatically driven MEMS devices: based on a pulse-induced charging technique

The charging mechanism of electrostatically driven MEMS devices was investigated. This paper shows experimental results of (i) electrostatic discharge (ESD) experiments, (ii) charging mechanism modelling and (iii) Kelvin probe force microscopy tests. It highlighted dielectric failure signature occurred under ESD events and allowed understanding of the underlying breakdown mechanism. A further study of the charging effect in conditions below the breakdown was carried out. A new approach to explore trapping phenomena that take place in thin dielectric used for electrostatic actuation is reported. Indeed a pulse-induced charging (PIC) test procedure aimed at reliability assessment of electrostatically actuated MEMS devices is presented. Based on this method, a procedure for carrying out stress testing was defined and successfully demonstrated on capacitive MEMS switches. In this case, high-voltage pulses were applied as stimulus and the parameter Vcapamin, which is directly related to the charging of the insulator layer, was monitored. The PIC stress test results were correlated with conventional cycling stress ones. Finally, temperature-dependent measurements, ranging from 300 up to 355 K, were reported in order to validate the thermal-activated behaviour of the test structures. According to an Arrhenius model, the given reference material showed an activation energy of around 0.77 eV.

[1]  R Plana,et al.  Nanoscale characterization of different stiction mechanisms in electrostatically driven MEMS devices based on adhesion and friction measurements. , 2011, Journal of colloid and interface science.

[2]  Takeo Oita.  RF MEMS: Focusing on the next step , 2009, 2009 IEEE International Ultrasonics Symposium.

[3]  P. Pons,et al.  Frequency Scalable Model for MEMS Capacitive Shunt Switches at Millimeter-Wave Frequencies , 2009, IEEE Transactions on Microwave Theory and Techniques.

[4]  K. Van Caekenberghe,et al.  RF MEMS on the radar , 2009 .

[5]  Patrick Pons,et al.  Structure dependent charging process in RF MEMS capacitive switches , 2007, Microelectron. Reliab..

[6]  Robert Puers,et al.  A comprehensive model to predict the charging and reliability of capacitive RF MEMS switches , 2004 .

[7]  Robert Plana,et al.  Electrostatic discharge failure analysis of capacitive RF MEMS switches , 2007, Microelectron. Reliab..

[8]  John Sealy Edward Townsend,et al.  The motion of electrons in gases , 1913 .

[9]  J. Townsend,et al.  Motion of electrons in gases , 1913 .

[10]  R.R. Mansour,et al.  Capacitive RF MEMS Switches Fabricated in Standard 0.35-$\mu{\hbox{m}}$ CMOS Technology , 2010, IEEE Transactions on Microwave Theory and Techniques.

[11]  Changsheng Xie,et al.  A Method of Feature Extraction on Recovery Curves for Fast Recognition Application With Metal Oxide Gas Sensor Array , 2009, IEEE Sensors Journal.

[12]  J. Schmitz,et al.  Kelvin probe study of laterally inhomogeneous dielectric charging and charge diffusion in RF MEMS capacitive switches , 2008, 2008 IEEE International Reliability Physics Symposium.

[13]  Jeremy A. Walraven,et al.  Electrostatic discharge/electrical overstress susceptibility in MEMS: a new failure mode , 2000, SPIE MOEMS-MEMS.

[14]  F. Paschen,et al.  Ueber die zum Funkenübergang in Luft, Wasserstoff und Kohlensäure bei verschiedenen Drucken erforderliche Potentialdifferenz , 1889 .

[15]  C. Goldsmith,et al.  Acceleration of Dielectric Charging in RF MEMS Capacitive Switches , 2006, IEEE Transactions on Device and Materials Reliability.

[16]  J. Cazaux,et al.  Reliability modeling of capacitive RF MEMS , 2005, IEEE Transactions on Microwave Theory and Techniques.

[17]  W. Greason.  Analysis of charged device model (CDM) ESD in MEMS , 2008, EOS/ESD 2008 - 2008 30th Electrical Overstress/Electrostatic Discharge Symposium.

[18]  E. Gusev,et al.  Review of Device and Reliability Physics of Dielectrics in Electrostatically Driven MEMS Devices , 2009, IEEE Transactions on Device and Materials Reliability.

[19]  P. Pons,et al.  Efficient design methodology of polymer based RF MEMS switches , 2004, Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004..

[20]  Mirko Scholz,et al.  A study of breakdown mechanisms in electrostatic actuators using mechanical response under EOS-ESD stress , 2009, 2009 31st EOS/ESD Symposium.

[21]  J. Papapolymerou,et al.  Dielectric charging mechanisms in RF-MEMS capacitive switches , 2006, 2007 European Microwave Conference.

[22]  Larry Levit,et al.  Electrical breakdown and ESD phenomena for devices with nanometer-to-micron gaps , 2003, SPIE MOEMS-MEMS.

[23]  Jean-Philippe Polizzi,et al.  Lifetime characterization of capacitive RF MEMS switches , 2005, SPIE MOEMS-MEMS.

[24]  J. Papapolymerou,et al.  Contactless Dielectric Charging Mechanisms in RF-MEMS Capacitive Switches , 2006, 2006 European Microwave Conference.

[25]  Patrick Pons,et al.  Charging-Effects in RF capacitive switches influence of insulating layers composition , 2006, Microelectron. Reliab..

[26]  V. Ziegler,et al.  Challenges and opportunities for RF-MEMS in aeronautics and space - The EADS perspective , 2010, 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).

[27]  R. Gaddi,et al.  Reliability Issues in RF-MEMS Switches Submitted to Cycling and ESD Test , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

[28]  Patrick Pons,et al.  Kelvin probe microscopy for reliability investigation of RF-MEMS capacitive switches , 2008, Microelectron. Reliab..

[29]  Michael Osterman,et al.  Energy harvesting using RF MEMS , 2010, 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC).

[30]  Paul Budenstein,et al.  On the Mechanism of Dielectric Breakdown of Solids , 1980, IEEE Transactions on Electrical Insulation.

[31]  P. Pons,et al.  A novel low cost failure analysis technique for dielectric charging phenomenon in electrostatically actuated MEMS devices , 2010, 2010 IEEE International Reliability Physics Symposium.

[32]  A GaAs MMIC-based inline RF MEMS power sensor , 2009, 2009 IEEE Sensors.

[33]  Marc P.Y. Desmulliez,et al.  Electric field breakdown at micrometre separations in air and nitrogen at atmospheric pressure , 2000 .

[34]  Jeremy A. Walraven,et al.  Anodic oxidation-induced delamination of the SUMMiT poly 0 to Silicon Nitride Interface , 2003, SPIE MOEMS-MEMS.