A 2 GHz Fully Balanced Switching HBT Mixer

This paper describes a highly linear lowvoltage 2 GHz AlGaAs HBT fully balanced downconversion mixer. The circuit is designed to operate with a supply voltage from 4.2V down to 3.2V. Both input ports ( LO/RF ) are single ended and well matched to 50 . Our results show a conversion gain of -7 dB and a third-order intercept point of 7 dBm realized at 3.6 V. The mixer utilizes 3 x 30 m2 single-finger HBTs fabricated in an Infineon AlGaAs/GaAs bipolar process. The size of the chip is 1 x 1 mm2.

[1]  E. Zanoni,et al.  A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors , 1998 .

[2]  J. Durec.  An integrated silicon bipolar receiver subsystem for 900-MHz ISM band applications , 1997 .

[3]  M. Rudolph,et al.  New extraction algorithm for GaAs-HBTs with low intrinsic base resistance , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[4]  J.-E. Mueller,et al.  A 2 W, 62% PAE, small chip size HBT MMIC for 3 V PCN applications , 1997, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.