Optimization of the VT-control method for low-power ultra-thin double-gate SOI logic circuits
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[1] T. Kaga,et al. Variable threshold-voltage SOI CMOSFETs with implanted back-gate electrodes for power-managed low-power and high-speed sub-1-V ULSIs , 1996, 1996 Symposium on VLSI Technology. Digest of Technical Papers.
[2] Vivek De,et al. Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage , 2002, 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).
[3] Vivek De,et al. Effectiveness of reverse body bias for leakage control in scaled dual Vt CMOS ICs , 2001, ISLPED '01.
[4] Kaushik Roy,et al. Technology scaling behavior of optimum reverse body bias for standby leakage power reduction in CMOS IC's , 1999, Proceedings. 1999 International Symposium on Low Power Electronics and Design (Cat. No.99TH8477).
[5] Young,et al. Dual Threshold Voltages And Substrate Bias: Keys To High Performance, Low Power, 0.1 /spl mu/m Logic Designs , 1997, 1997 Symposium on VLSI Technology.
[6] Davood Shahrjerdi,et al. Power optimization in ultra-thin DG SOI logic circuits by means of VT-control method , 2004 .
[7] D. A. Antoniadis,et al. Effect of back-gate biasing on the performance and leakage control in deeply scaled SOI MOSFETs , 2002, 2002 IEEE International SOI Conference.
[8] Davood Shahrjerdi,et al. Optimization of the VT control method for low-power ultra-thin double-gate SOI logic circuits , 2005, Integr..
[9] Dimitri A. Antoniadis,et al. Back-gated CMOS on SOIAS for dynamic threshold voltage control , 1997 .