The rapid fall in module prices demands researchers to come up with substantial efficiency improvement and cost reductions in the solar cell and module processes. This paper presents a solar cell development on n-type Cz-Si substrates with homogeneous diffusion of boron emitter and phosphorous backsurface-field. The resulting solar cell is bifacial and it is fabricated using only industrial compatible techniques. The best achieved solar cell efficiency, using a screen printed and firing through metallization, on 241 cm (total area) wafers is 18.6%. Moreover, we present a new method to passivate boron emitters which substantially reduces surface recombination resulting in improved VOC of the cells. We show that internal quantum efficiencies of these n-type cells when illuminated from the frontand from the back side are identical when good quality CzSi substrates are used in the fabrication.