The Impact of Gate Edge Damage on Pixel Read Noise
暂无分享,去创建一个
S. F. Ting | Jhy-Jyi Sze | S. Ting | C. Wang | R. J. Lin | Seiji Takahashi | J. M. Hung | Y. C. Lu | T. H. Tseng | C. C. Wang | Shou-Gwo | R. Lin | J. Sze | Seiji Takahashi | J. Hung | T. Tseng
[1] T. Ma,et al. Channel length dependence of random telegraph signal in sub-micron MOSFET's , 1994, IEEE Electron Device Letters.
[2] E. Worley,et al. The gate bias and geometry dependence of random telegraph signal amplitudes [MOSFET] , 1997, IEEE Electron Device Letters.
[3] A. Theuwissen,et al. Random Telegraph Signal in CMOS Image Sensor Pixels , 2006, 2006 International Electron Devices Meeting.
[4] K. Itonaga,et al. Extremely-low-noise CMOS Image Sensor with high saturation capacity , 2011, 2011 International Electron Devices Meeting.