Strain Engineering of Plasma Dispersion Effect for SiGe Optical Modulators
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[1] John C. Bean,et al. MEASUREMENT OF THE BANDGAP OF GexSi1−x/Si STRAINED-LAYER HETEROSTRUCTURES , 1985 .
[2] F Y Gardes,et al. 40 Gb/s silicon photonics modulator for TE and TM polarisations. , 2011, Optics express.
[3] M. Morse,et al. High speed silicon Mach-Zehnder modulator. , 2005, Optics express.
[4] L. Sekaric,et al. Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator. , 2007, Optics express.
[5] Nahum Izhaky,et al. High-speed optical modulation based on carrier depletion in a silicon waveguide. , 2007, Optics express.
[6] M. Paniccia,et al. A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor , 2004, Nature.
[7] David J. Thomson,et al. Silicon optical modulators , 2010 .
[8] J. M. McGregor,et al. Drift hole mobility in strained and unstrained doped Si/sub 1-x/Ge/sub x/ alloys , 1993 .
[9] R. V. van Dover,et al. Si-doped aluminates for high temperature metal-gate CMOS: Zr-Al-Si-O, a novel gate dielectric for low power applications , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
[10] Qianfan Xu,et al. Guiding and confining light in void nanostructure. , 2004, Optics letters.
[11] W. Kohn,et al. Motion of Electrons and Holes in Perturbed Periodic Fields , 1955 .
[12] M. Watts,et al. Low-Voltage, Compact, Depletion-Mode, Silicon Mach–Zehnder Modulator , 2010, IEEE Journal of Selected Topics in Quantum Electronics.
[13] S. Laux,et al. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys , 1996 .
[14] Chuang,et al. Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells. , 1992, Physical review. B, Condensed matter.
[15] Cary Gunn,et al. CMOS Photonics for High-Speed Interconnects , 2006, IEEE Micro.
[16] J. Dismukes,et al. Lattice Parameter and Density in Germanium-Silicon Alloys1 , 1964 .
[17] Qianfan Xu,et al. 12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators. , 2007, Optics express.
[18] Jurgen Michel,et al. Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators , 2008 .
[19] J. M. Luttinger. Quantum Theory of Cyclotron Resonance in Semiconductors: General Theory , 1956 .
[20] D. Miller,et al. Strong quantum-confined Stark effect in germanium quantum-well structures on silicon , 2005, Nature.
[21] Geert Hellings,et al. Implant-Free SiGe Quantum Well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel , 2010, 2010 International Electron Devices Meeting.
[22] Richard A. Soref,et al. Carrier-induced change in refractive index of InP, GaAs and InGaAsP , 1990 .
[23] R. Soref,et al. Electrooptical effects in silicon , 1987 .
[24] Po Dong,et al. High speed carrier-depletion modulators with 1.4V-cm V(pi)L integrated on 0.25microm silicon-on-insulator waveguides. , 2010, Optics express.
[25] Jun Ushida,et al. 25 GHz operation of silicon optical modulator with projection MOS structure , 2010, 2010 Conference on Optical Fiber Communication (OFC/NFOEC), collocated National Fiber Optic Engineers Conference.
[26] J. Hauser,et al. Electron and hole mobilities in silicon as a function of concentration and temperature , 1982, IEEE Transactions on Electron Devices.
[27] Qianfan Xu,et al. Micrometre-scale silicon electro-optic modulator , 2005, Nature.
[28] P. Y. Yu,et al. Fundamentals of Semiconductors , 1995 .
[29] Y. Shiraki,et al. Silicon–germanium (SiGe) nanostructures , 2011 .
[30] Juthika Basak,et al. 40 Gbit/s silicon optical modulator for highspeed applications , 2007 .
[31] R. Ho,et al. Ultra-low-energy all-CMOS modulator integrated with driver. , 2010, Optics express.
[32] R. People,et al. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures , 1985 .
[33] Vogl,et al. Electronic-band parameters in strained Si1-xGex alloys on Si1-yGey substrates. , 1993, Physical review. B, Condensed matter.
[34] M. Shur,et al. Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe , 2001 .
[35] D. J. Robbins,et al. Near‐band‐gap photoluminescence from pseudomorphic Si1−xGex single layers on silicon , 1992 .
[36] R. Chau,et al. A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging , 2007, 2007 IEEE International Electron Devices Meeting.
[37] M. Salib,et al. Phase modulation efficiency and transmission loss of silicon optical phase shifters , 2005, IEEE Journal of Quantum Electronics.