Effect of Rod Diameters on Flow Pattern and Temperature Profile in Monosilane Siemens Poly-Si Reactor

The deposition rate of polysilicon and the temperature and concentration profiles of the reactant gases in a monosilane Siemens reactor were compared for rod diameters of 10–120 mm using the computational fluid dynamics method. It was found that the power consumption primarily depends on the Si rod diameter and the Si deposition rate. The relationship between the power consumption and the Si deposition rate at different Si rod diameters was established from the accumulated experimental data of a pilot-scale four-rod reactor, and it is incorporated into the MonoSim-S software package.