Power GaAs Fet Amplifier Design With Large Signal Tuning Parameters

The large-signal tuning parameters have been measured for three medium power GaAs FETs in both chip and packaged form. The output tuning parameter ( rL) is especially important for determining the output power, gain, and efficiency of power GaAs FET amplifiers. The effect of detuning from the optimum point has been measured. The application of large signal tuning parameters to a 4-8 GHz power amplifier design is included.