New hot-carrier-resistant P-I-N MOSFET structure

A new P-I-N MOSFET structure has been developed with near-intrinsic doping (1015 - 1016 cm-3 in our case) in the channel near the source/drain regions. The new structure is more effective in reducing the peak electric field at the channel/drain junction than LDD structures, and hence results in better hot carrier suppression. Also, the near intrinsic region near the drain reduces the transverse electric field and gives rise to higher carrier mobility and drive current than LDD devices.