Etching behavior of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane
暂无分享,去创建一个
Angeliki Tserepi | Evangelos Gogolides | George P. Patsis | E. Valamontes | V. Constantoudis | David Eon | Gilles Cartry | C. Cardinaud | G. Turban | E. Gogolides | V. Constantoudis | D. Eon | A. Tserepi | G. Patsis | G. Cartry | Ch. Cardinaud | M. Peignon | M. C. Peignon | E. Valamontes | G. Cordoyiannis | G. Turban | G. Cordoyiannis
[1] Roderick R. Kunz,et al. Outlook for 157 nm resist design , 1999 .
[2] James W. Taylor,et al. Correlation of atomic force microscopy sidewall roughness measurements with scanning electron microscopy line-edge roughness measurements on chemically amplified resists exposed by x-ray lithography , 1999 .
[3] Surface and line-edge roughness in plasma-developed resists , 2001 .
[4] Hiroaki Oizumi,et al. Theoretical estimation of absorption coefficients of various polymers at 13 nm , 2000 .
[5] K. Ronse,et al. Metrology method for the correlation of line edge roughness for different resists before and after etch , 2001 .
[6] M. Hatzakis,et al. The use of organosilicon polymers in multilayer plasma resist processing , 1987 .
[7] J. Pelletier,et al. Development of Polymers in O2 Plasmas: Temperature Effects and Transition to Imperfect Anisotropy , 1995 .
[8] Anne-Marie Goethals,et al. Dry development in an O2/SO2 plasma for sub-0.18 μm top layer imaging processes , 1998 .
[9] Donald C. Hofer,et al. Transfer etching of bilayer resists in oxygen-based plasmas , 2000 .
[10] Surface and line-edge roughness in solution and plasma developed negative tone resists: Experiment and simulation , 2000 .
[11] Takahiro Matsuo,et al. Reduction of line edge roughness in the top surface imaging process , 1998 .
[12] James W. Taylor,et al. Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by x-ray lithography , 1999 .
[13] S. Rhee,et al. AFM study of SiNx:H surfaces treated by hydrogen plasma: modification of morphological and scaling characteristics , 2001 .
[14] Johann W. Bartha,et al. Low temperature etching of Si in high density plasma using SF6/O2 , 1995 .
[15] Evangelos Gogolides,et al. Absorbance and outgasing of photoresist polymeric materials for UV lithography below 193 nm including 157 nm lithography , 2000 .
[16] K. Ronse,et al. Resist surface investigations for reduction of Line-Edge-Roughness in Top Surface Imaging technology , 1999 .
[17] Fereydoon Family,et al. Dynamic scaling and phase transitions in interface growth , 1990 .
[18] O. Joubert,et al. X-ray photoelectron spectroscopy analyses of oxide-masked organic polymers etched in high density plasmas using SO2/O2 gas mixtures , 1999 .
[19] E. Gogolides,et al. Evaluation of siloxane and polyhedral silsesquioxane copolymers for 157 nm lithography , 2002 .