Experimental Investigation of Hole Transport in Strained $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{SOI}$ pMOSFETs: Part II—Mobility and High-Field Transport in Nanoscaled PMOS

We experimentally studied the high-field transport and mobility in nanoscaled Si1 -xGex/silicon on insulator (SOI) PMOSFETs with gate length down to 17 nm. The study relies on the electrical characterization performed from room temperature down to 20 K. Strain relaxation in short channel has been evidenced by nanobeam electron diffraction, which explains the decrease of hole velocity and mobility with gate length. Despite this strain relaxation, a mobility gain is nevertheless preserved in sub-100-nm SiGe PMOS, with a maximum gain for 20% Ge in the layer. Short-channel mobility extraction reveals a lower contribution of Coulomb scattering for SiGe channel PMOS, which may explain this mobility improvement. We also demonstrate that the short-channel transport is governed by the Ge composition in the SiGe layer, with an optimum concentration of 20% Ge. We have finally evidenced a different temperature dependence of the limiting velocity at high field between SiGe and Si PMOS, suggesting that SiGe transport will be governed by inelastic scattering instead of ballisticity as L is shrunk.

[1]  Weber,et al.  Near-band-gap photoluminescence of Si-Ge alloys. , 1989, Physical review. B, Condensed matter.

[2]  O. Faynot,et al.  Evidences on the Physical Origin of the Unexpected Transport Degradation in Ultimate n-FDSOI Devices , 2009, IEEE Transactions on Nanotechnology.

[3]  D. E. Burk,et al.  MOSFET electron inversion layer mobilities-a physically based semi-empirical model for a wide temperature range , 1989 .

[4]  M. Lee,et al.  Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors , 2005 .

[5]  Gerard Ghibaudo,et al.  A new technique to extract the gate bias dependent s/d series resistance of sub-100nm MOSFETs , 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications.

[6]  D. Esseni,et al.  On the experimental determination of channel back-scattering in nanoMOSFETs , 2007, 2007 IEEE International Electron Devices Meeting.

[7]  R. Bez,et al.  A physically-based model of the effective mobility in heavily-doped n-MOSFETs , 1998 .

[8]  G. Ghibaudo,et al.  SiGe channel p-MOSFETs scaling-down , 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

[9]  Gilles Reimbold,et al.  A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors , 2009 .

[10]  J.L. Hoyt,et al.  Thickness Dependence of Hole Mobility in Ultrathin SiGe-Channel p-MOSFETs , 2008, IEEE Transactions on Electron Devices.

[11]  Shinichi Takagi,et al.  Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films , 1998 .

[12]  David J. Frank,et al.  Nanoscale CMOS , 1999, Proc. IEEE.

[13]  S. Selberherrb,et al.  A temperature dependent model for the saturation velocity in semiconductor materials , 2022 .

[14]  Dimitri A. Antoniadis,et al.  Hole mobility enhancements in strained Si/Si1-yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1-xGex (x , 2001 .

[15]  L. Selmi,et al.  Multi-subband monte carlo modeling of nano-mosfets with strong vertical quantization and electron gas degeneration , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[16]  D. Antoniadis,et al.  Investigating the relationship between electron mobility and velocity in deeply scaled NMOS via mechanical stress , 2001, IEEE Electron Device Letters.

[17]  K. Natori.  Ballistic metal-oxide-semiconductor field effect transistor , 1994 .

[18]  S. Laux,et al.  Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys , 1996 .

[19]  G. Ghibaudo,et al.  Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling , 2006, 2006 International Electron Devices Meeting.

[20]  Bin Liu,et al.  Physical compact modeling and analysis of velocity overshoot in extremely scaled CMOS devices and circuits , 2001 .

[21]  J. Hartmann,et al.  Experimental Investigation of Hole Transport in Strained $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{SOI}$ pMOSFETs—Part I: Scattering Mechanisms in Long-Channel Devices , 2012, IEEE Transactions on Electron Devices.

[22]  G. Ghibaudo,et al.  Electrical transport characterization of nano CMOS devices with ultra-thin silicon film , 2009, 2009 International Workshop on Junction Technology.

[23]  Gerard Ghibaudo,et al.  New method for the extraction of MOSFET parameters , 1988 .

[24]  O. Faynot,et al.  Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO2 gate stack , 2007, 2007 IEEE International Electron Devices Meeting.

[25]  M. Lundstrom,et al.  Essential physics of carrier transport in nanoscale MOSFETs , 2002 .

[26]  Mark S. Lundstrom.  Fundamentals of Carrier Transport, 2nd edn , 2002 .

[27]  Kiehl,et al.  Theoretical hole mobility in a narrow Si/SiGe quantum well. , 1993, Physical review. B, Condensed matter.

[28]  T. Ouisse,et al.  Relationship between empirical and theoretical mobility models in silicon inversion layers , 1996 .

[29]  D. Antoniadis,et al.  On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit? , 2001, IEEE Electron Device Letters.

[30]  M. Mouis,et al.  Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters , 2006, IEEE Transactions on Electron Devices.

[31]  M. Lundstrom.  Fundamentals of carrier transport , 1990 .

[32]  Ulf Konig,et al.  High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition , 2000 .

[33]  G. Ghibaudo,et al.  New experimental insight into ballisticity of transport in strained bulk MOSFETs , 2006, 2009 Symposium on VLSI Technology.

[34]  S. Thompson,et al.  Strain Effect in Semiconductors , 2010 .

[35]  C. Ortolland,et al.  High-mobility Si1−xGex-channel PFETs: Layout dependence and enhanced scalability, demonstrating 90% performance boost at narrow widths , 2010, 2010 Symposium on VLSI Technology.

[36]  O. Faynot,et al.  Dual Strained Channel co-integration into CMOS, RO and SRAM cells on FDSOI down to 17nm gate length , 2010, 2010 International Electron Devices Meeting.

[37]  L. Feldman,et al.  Theory and observation of enhanced, high field hole transport in Si/sub 1-x/Ge/sub x/ quantum well p-MOSFETs , 1996 .

[38]  M. Shur,et al.  Low ballistic mobility in submicron HEMTs , 2002, IEEE Electron Device Letters.

[39]  John C. Bean,et al.  Measurement of the band gap of GexSi1−x/Si strained‐layer heterostructures , 1985 .

[40]  M. Jurczak,et al.  Experimental and comparative investigation of low and high field transport in substrate- and process-induced strained nanoscaled MOSFETs , 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

[41]  M. Fischetti.  Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures , 2001 .

[42]  John D. Cressler,et al.  A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology , 1999 .

[43]  G. Ghibaudo,et al.  Conventional Technological Boosters for Injection Velocity in Ultrathin-Body MOSFETs , 2007, IEEE Transactions on Nanotechnology.

[44]  S. Deleonibus,et al.  Experimental Investigation on the Quasi-Ballistic Transport: Part II—Backscattering Coefficient Extraction and Link With the Mobility , 2009, IEEE Transactions on Electron Devices.

[45]  P.W. Liu,et al.  Strain Effects of Si and SiGe Channel on (100) and (110) Si Surfaces for Advanced CMOS Applications , 2007, 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

[46]  A. Bournel,et al.  Monte Carlo study of apparent mobility reduction in nano-MOSFETs , 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

[47]  P. Hashemi,et al.  Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs , 2009, IEEE Transactions on Electron Devices.

[48]  Gerard Ghibaudo,et al.  A New Technique to Extract the Source/Drain Series Resistance of MOSFETs , 2009, IEEE Electron Device Letters.

[49]  Kenji Natori,et al.  New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission , 2009 .

[50]  M. S. Singh,et al.  Influence of substrate composition and crystallographic orientation on the band structure of pseudomorphic Si-Ge alloy films. , 1990, Physical review. B, Condensed matter.