论文信息 - FOXFET in PIN diode strip detector [X-ray mammography]

FOXFET in PIN diode strip detector [X-ray mammography]

Simulation and operation of a field oxide FET (FOXFET) biasing structure in a fabricated AC coupled single-sided strip detector are presented. The spatial distribution of the current density was explained by examination of the electric potential distribution and carrier concentration in the channel region of the FOXFET. The results presented confirm that incorporation of the FOXFET biasing structure is justified.

[1] P. Singh,et al. Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors , 1993 .

[2] T. Tuuva,et al. A Si strip detector with integrated coupling capacitors , 1987 .

[3] P. Allport,et al. Double sided FoxFET biased microstrip detectors , 1994 .

[4] D. Schroder. Semiconductor Material and Device Characterization , 1990 .

[5] W. Bonvicini,et al. FOXFET structure — device modelling and analysis , 1997 .

[6] D. Bisello,et al. Radiation tolerance of the FOXFET biasing scheme for AC-coupled Si microstrip detectors , 1993 .