Mobility transition in the two-dimensional electron gas in GaAsAlGaAs heterostructures
暂无分享,去创建一个
D. Tsui | G. Weimann | B. Lin
[1] G. Weimann,et al. Molecular beam epitaxial growth and transport properties of modulation‐doped AlGaAs‐GaAs heterostructures , 1985 .
[2] A. Gossard,et al. Mobility of the two‐dimensional electron gas in GaAs‐AlxGa1−xAs heterostructures , 1984 .
[3] E. Mendez,et al. Temperature dependence of the electron mobility in GaAs‐GaAlAs heterostructures , 1984 .
[4] Peter J. Price,et al. Low temperature two-dimensional mobility of a GaAs heterolayer , 1984 .
[5] P. Pfeffer,et al. Theory of free-electron optical absorption in n-GaAs , 1984 .
[6] A. Gossard,et al. Temperature dependence of electron mobility inGaAs−AlxGa1−xAsheterostructures from 1 to 10 K , 1984 .
[7] Michael S. Shur,et al. Low field mobility of 2‐d electron gas in modulation doped AlxGa1−xAs/GaAs layers , 1983 .
[8] S. Hiyamizu,et al. Improved Electron Mobility Higher than 106 cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE , 1983 .
[9] T. Ando. Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature Mobility , 1982 .
[10] A. Gossard,et al. Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration , 1981 .
[11] A. Gossard,et al. Transport properties of GaAs‐AlxGa1−x As heterojunction field‐effect transistors , 1981 .
[12] P. J. Price,et al. Two-dimensional electron transport in semiconductor layers. I. Phonon scattering , 1981 .
[13] A. Gossard,et al. Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs-(AlGa)As superlattices , 1981 .
[14] A. Gossard,et al. Resistance standard using quantization of the Hall resistance of GaAs‐AlxGa1−xAs heterostructures , 1981 .
[15] R. Milano,et al. Schottky barrier Ga1−xAlxAs1−ySby alloy avalanche photodetectors , 1980 .
[16] Frank Stern,et al. Calculated Temperature Dependence of Mobility in Silicon Inversion Layers , 1980 .
[17] R. G. Wheeler,et al. Temperature-Dependent Resistivities in Silicon Inversion Layers at Low Temperatures , 1980 .
[18] K. Hess. Impurity and phonon scattering in layered structures , 1979 .
[19] J. Woolley,et al. Electrical transport and band structure of GaAs , 1979 .
[20] D. Rode. Theory of Electron Galvanomagnetics in Crystals: Hall Effect in Semiconductors and Semimetals , 1973 .