High-electron-mobility In0.53Ga0.47As/In0.8Ga0.2As composite-channel modulation-doped structures grown by metal-organic vapor-phase epitaxy

Metal-organic vapor-phase epitaxy (MOVPE) growth of In-rich In<inf>x</inf>Ga<inf>1−x</inf>As on InP was investigated as a way to obtain extremely high electron mobility in modulation-doped (MD) structures. High-quality In<inf>0.53</inf>Ga<inf>0.47</inf>As/In<inf>0.8</inf>Ga<inf>0.2</inf>As composite-channel (CC) MD structures were successfully grown without significant lowering of growth temperature. The room-temperature electron mobility in the CC MD reached 150,000 cm<sup>2</sup>/Vs at the sheet carrier concentration (Ns) of 2.1×10<sup>12</sup> cm<sup>−2</sup>, which is one of the highest ever reported in MOVPE-grown InP-based InGaAs/InAlAs MD structures.

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