CdSe(ZnS) nanocomposite luminescent high temperature sensor

High temperature luminescence-based sensing is demonstrated by embedding colloidal CdSe(ZnS) quantum dots into a high temperature SiO(2) dielectric matrix. The nanocomposite was fabricated by a solution process method. As-prepared CdSe(ZnS) quantum dots in the nanocomposite sensor show an absorption band at a wavelength of 600 nm (2.06 eV). Photoluminescence (PL) measurements show a room temperature emission peak at 606 nm (2.04 eV). The temperature-dependent emission spectra study shows for the first time a CdSe(ZnS)-SiO(2) nanocomposite-based high temperature sensor. The temperature-dependent spectral and intensity modes of the nanocomposite thin film photoluminescence were investigated from 295-525 K. The sensor shows a variation of the emission wavelength as a function of temperature with a sensitivity of ∼ 0.11 nm °C( - 1). The film morphology and roughness are characterized using AFM.

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