Experimental determination of current spill-over and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes

We report the experimental determination of current spill-over in InGaN/GaN blue light emitting diodes by measuring the change in the forward current generated by a resonant excitation. To quantify accurately, the absorption of the laser as a function of the forward current was also determined. Two samples that have clearly different behavior of efficiency droop were compared to clarify the relationship between the current spill-over and the efficiency droop. We conclude that the carrier spill-over does occur and can be a significant cause for the efficiency droop but cannot single-handedly account for the efficiency droop.

[1]  J. Piprek.  Efficiency droop in nitride‐based light‐emitting diodes , 2010 .

[2]  Michael R. Krames,et al.  Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes , 2008 .

[3]  Lai Wang,et al.  Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization , 2010 .

[4]  Achieving ambipolar vertical organic transistors via nanoscale interface modification , 2007 .

[5]  Xing Li,et al.  The effect of ballistic and quasi‐ballistic electrons on the efficiency droop of InGaN light emitting diodes , 2010 .

[6]  S.C. Wang,et al.  Temperature-Dependent Electroluminescence Efficiency in Blue InGaN–GaN Light-Emitting Diodes With Different Well Widths , 2010, IEEE Photonics Technology Letters.

[7]  Bo E. Sernelius,et al.  Defect related issues in the current roll-off in InGaN based light emitting diodes , 2007 .

[8]  Peter Blood,et al.  Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm , 2003, Applied Physics Letters.

[9]  S. Ramachandran,et al.  Introduction to the Issue on High-Power Fiber Lasers , 2009 .

[10]  Hadis Morkoç,et al.  On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers , 2008 .

[11]  J. Piprek,et al.  Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers , 2006, IEEE Photonics Technology Letters.

[12]  S. Nakamura,et al.  Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes , 1999 .

[13]  Dong-Yul Lee,et al.  Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes , 2009 .

[14]  Hadis Morkoç,et al.  Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells , 2008 .

[15]  D. A. Zakheim,et al.  Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping , 2007 .

[16]  Michael R. Krames,et al.  Auger recombination in InGaN measured by photoluminescence , 2007 .

[17]  Shuji Nakamura,et al.  Measurement of electron overflow in 450 nm InGaN light-emitting diode structures , 2009 .

[18]  Hao-Chung Kuo,et al.  Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer , 2010 .

[19]  A. É. Yunovich,et al.  The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells , 1998 .

[20]  Jung-Hoon Song,et al.  Role of photovoltaic effects on characterizing emission properties of InGaN/GaN light emitting diodes , 2009 .

[21]  Michael Kneissl,et al.  Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy , 2002 .

[22]  Michael R. Krames,et al.  Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2 , 2007 .