论文信息 - Investigations of semiconductor devices using SIMS; diffusion, contamination, process control

Investigations of semiconductor devices using SIMS; diffusion, contamination, process control

Abstract We have surveyed 22,155 analyses issues to know the portion of surface analysis at the total analyses activities. According to the survey result, the contribution of SIMS in the total analyses issues was about 7%. The portions of semiconductor process control, composition and contamination in the SIMS analyses issues are 25%, 29% and 16%, respectively. In this article, some examples of the semiconductor device process control, identification of contaminants, and failure analyses have been reviewed. The behavior of H, O, and Ti at the Pt/Ti/GaInZnO interfaces and their influences on the electrical property of thin film transistor are demonstrated. Also discolor issues including organic material contamination problem on Au pad are discussed in detail.

[1] Akemi Ueyama,et al. Impact of Organic Contaminants from the Environment on Electrical Characteristics of Thin Gate Oxides , 1998 .

[2] H. Ohta,et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.

[3] I. Choi,et al. Time-of-flight secondary ion mass spectrometry chemical imaging analysis of micropatterns of streptavidin and cells without labeling , 2006 .

[4] Nicholas Lockyer,et al. A C60 primary ion beam system for time of flight secondary ion mass spectrometry: its development and secondary ion yield characteristics. , 2003, Analytical chemistry.

[5] N. Winograd,et al. C60 molecular depth profiling of a model polymer , 2004 .

[6] D. Ames,et al. Surface contamination effects on film adhesion on metals and organic polymers , 2004 .

[7] K. Uosaki,et al. Attenuated total reflection Fourier transform infrared spectroscopy study of the adsorption of organic contaminants on a hydrogen-terminated Si(111) surface in air , 1999 .

[8] H. W. Werner,et al. Secondary Ion Mass Spectrometry: Basic Concepts, Instrumental Aspects, Applications and Trends , 1987 .

[9] Changjung Kim,et al. Effect of Ga∕In ratio on the optical and electrical properties of GaInZnO thin films grown on SiO2∕Si substrates , 2007 .

[10] L. Hanley,et al. Surface Analysis Studies of Yield Enhancements in Secondary Ion Mass Spectrometry by Polyatomic Projectiles , 2001 .