The advent of new technologies is driving the emergence of alternative doping methods. For instance, plasma doping is potentially a critical enabler for three-dimensional (3D) devices in the integrated circuit (IC) market, requiring flow rates much higher than those of traditional planar structures. Unlike traditional beam-line ion implantation, dopants are typically not introduced from an on-board gas box within the tool; rather they are distributed from a remote gas delivery system. This is possible given that the gas delivery system is held at the same potential as the tool and there is no high voltage gap to overcome. Similarities exist in other markets such as solar, flat panel display, and power electronics, in terms of needing to deliver high gas flows from a remote delivery source. This requirement poses significant hurdles in terms of process safety, installation considerations, and the ability to enable high gas conductance through proper flow component selection. This paper details how each of these factors affects the performance of the system and the ability to achieve the required process flow rates. Theoretical flow modeling is used to estimate overall system conductance and gas utilization and these results are compared to empirical data to show that system attributes can be predicted. This capability coupled with a gas delivery cabinet that is designed to enable the performance and safety of SAGS Type1 delivery systems, provides a robust solution to material delivery needs for novel doping applications.