Finite element Monte Carlo simulation of recess gate compound FFTs

Abstract In this paper we report on a new Monte Carlo module for simulation of recess gate compound FETs incorporated in our Heterojunction 2D Finite element simulator H2F. The shape of the gate and recess determines the device parasitics to a great extent and strongly influences the performance of these devices. A finite element discretization scheme has been used to model precisely the device geometry. The module combines the accurate description of the device geometry with realistic particle simulation of hot carrier transport. The flexibility of our approach is illustrated in example simulations of FETs fabricated in the Nanoelectronics Research Centre at Glasgow University.