论文信息 - Some issues of power MOSFETs

Some issues of power MOSFETs

Several recent studies of power MOSFETs are discussed in this paper: (a) The second-breakdown of power MOSFETs is shown to be triggered by the turn-on of the parasitic bipolar transistor, (b) The I-V characteristics of power MOSFETs operating in reverse mode (such as when used as a synchronous rectifier) are studied, (c) A H5°-spreadingangle model for the calculation of epi-resistance is shown to be more accurate than any previously published model for linear source geometry. More importantly, this model has been extended to cellular source geometries.

Chenming Hu | Min-hwa Chi | C. Hu | M. Chi

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