论文信息 - Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM

Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM

Abstract This paper describes a unified memory (URAM) that utilizes a nanocrystal SOI MOSFET for multi-functional applications of both nonvolatile memory (NVM) and capacitorless 1T-DRAM. By using a discrete storage node (Ag nanocrystal) as the floating gate of the NVM, high defect immunity and 2-bit/cell operation were achieved. The embedded nanocrystal NVM also showed 1T-DRAM operation (program/erase time = 100 ns) characteristics, which were realized by storing holes in the floating body of the SOI MOSFET, without requiring an external capacitor. Three-bit/cell operation was accomplished for different applications – 2-bits for nonvolatility and 1-bit for fast operation.

Jin-Woo Han | Yang-Kyu Choi | Seong-Wan Ryu | Chung-Jin Kim | Sungho Kim

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