A 333 ps/800 MHz 7 K-gate bipolar macrocell array employing 4 level metallization
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[1] T. Nakashima,et al. 10 ns 8x8 multiplier LSI using super self-aligned process technology , 1983, IEEE Journal of Solid-State Circuits.
[2] Tsuneta Sudo. Integrated DA System for Custom VLSI Design , 1982, 1982 Symposium on VLSI Technology. Digest of Technical Papers.
[3] Y. Yamamoto,et al. A 3-ns 1-kbit RAM using super self-aligned process technology , 1981, IEEE Journal of Solid-State Circuits.
[4] R. J. Widlar,et al. New developments in IC voltage regulators , 1970 .
[5] A.S. Bass. A 2500 gate bipolar macrocell array with 250 ps gate delay , 1982, IEEE Journal of Solid-State Circuits.
[6] H. H. Muller,et al. Fully-compensated emitter-coupled logic , 1973 .
[7] S. Brenner,et al. A 10,000 gate bipolar VLSI masterslice utilizing four levels of metal , 1983, 1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
[8] H. Schettler,et al. A study on bipolar VLSI gate-arrays assuming four layers of metal , 1982, IEEE Journal of Solid-State Circuits.